PSMN6R4-30MLDX

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Nexperia USA Inc.

N-CHANNEL 30 V, 6.4 MΩ LOGIC LEVEL MOSFET IN LFPAK33 USING NEXTPOWERS3 TECHNOLOGY

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PSMN6R4-30MLDX

Active

Nexperia USA Inc.

N-CHANNEL 30 V, 6.4 MΩ LOGIC LEVEL MOSFET IN LFPAK33 USING NEXTPOWERS3 TECHNOLOGY

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Description Specifications Series Pricing CAD Documents

Description

General part information

PSMN6R4-30MLD Series

Logic level gate drive N-channel enhancement mode MOSFET in an LFPAK33 package. The NextPowerS3 portfolio, utilising Nexperia’s unique "SchottkyPlus" technology, delivers high efficiency and the low spiking performance usually associated with MOSFETs with an integrated Schottky or Schottky-like body diode but without problematic high leakage current. NextPowerS3 is particularly suited to high efficiency applications at high switching frequencies.

Technical Specifications

Parameters and characteristics for this part

Specification	PSMN6R4-30MLDX

Current - Continuous Drain (Id) (Tc)	66 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	13.7 nC, 13.7 nC, 13.7 nC
Input Capacitance (Ciss) (Max)	832 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	8-LFPAK33 (5-Lead), SOT-1210
Package Name	LFPAK33
Power Dissipation (Max)	51 W
Rds On (Max)	6.3 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	2.2 V

PSMN6R4-30MLD Series

N-channel 30 V, 6.4 mΩ logic level MOSFET in LFPAK33 using NextPowerS3 Technology

Part	Package / Case	Vgs (Max)	Rds On (Max)	Mounting Type	Input Capacitance (Ciss) (Max)	Drain to Source Voltage (Vdss)	FET Type	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Package Name	Vgs(th) (Max)	Current - Continuous Drain (Id) (Tc)	Operating Temperature (Min)	Operating Temperature (Max)	Gate Charge (Max)	Power Dissipation (Max)	Technology
Nexperia USA Inc. PSMN6R4-30MLDX	8-LFPAK33 (5-Lead) SOT-1210	20 V	6.3 mOhm	Surface Mount	832 pF	30 V	N-Channel	10 V	4.5 V	LFPAK33	2.2 V	66 A	-55 °C	175 °C	13.7 nC 13.7 nC 13.7 nC	51 W	MOSFET (Metal Oxide)