Specification	IPS80R2K4P7AKMA1

Current - Continuous Drain (Id) (Tc)	2.5 A
Drain to Source Voltage (Vdss)	800 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	7.5 nC
Input Capacitance (Ciss) (Max)	150 pF
Mounting Type	Through Hole
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-251-3 Short Leads, TO-251AA, IPAK
Package Name	PG-TO251-3
Power Dissipation (Max)	22 W
Rds On (Max)	2.4 Ohm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	3.5 V

IPS80R2 Series

Part	Technology	Input Capacitance (Ciss) (Max)	Package Name	Vgs(th) (Max)	Rds On (Max)	Mounting Type	Operating Temperature (Min)	Operating Temperature (Max)	Current - Continuous Drain (Id) (Tc)	Vgs (Max)	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Package / Case	Power Dissipation (Max)	Gate Charge (Max)
INFINEON IPS80R2K0P7AKMA1	MOSFET (Metal Oxide)	175 pF	PG-TO251-3-342	3.5 V	2 Ohm	Through Hole	-55 °C	150 °C	3 A	20 V	800 V	10 V	N-Channel	IPAK TO-251-3 Stub Leads	24 W	9 nC
INFINEON IPS80R2K4P7AKMA1	MOSFET (Metal Oxide)	150 pF	PG-TO251-3	3.5 V	2.4 Ohm	Through Hole	-55 °C	150 °C	2.5 A	20 V	800 V	10 V	N-Channel	IPAK TO-251-3 Short Leads TO-251AA	22 W	7.5 nC

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