Specification	SI4436DY-T1-E3

Current - Continuous Drain (Id) (Tc)	8 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	32 nC
Input Capacitance (Ciss) (Max)	1100 pF, 1100 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package Length	0.154 in
Package Name	8-SOIC
Package Width	3.9 mm
Power Dissipation (Max)	5 W, 2.5 W
Rds On (Max)	36 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	2.5 V

SI4436 Series

Part	Input Capacitance (Ciss) (Max)	Package Name	Rds On (Max)	Power Dissipation (Max)	FET Type	Mounting Type	Drain to Source Voltage (Vdss)	Gate Charge (Max)	Current - Continuous Drain (Id) (Tc)	Vgs (Max)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Operating Temperature (Min)	Operating Temperature (Max)	Package Length	Package Width	Vgs(th) (Max)	Technology
Vishay Dale SI4436DY-T1-E3	1100 pF 1100 pF	8-SOIC	36 mOhm	2.5 W 5 W	N-Channel	Surface Mount	60 V	32 nC	8 A	20 V	10 V	4.5 V	-55 °C	150 °C	0.154 in	3.9 mm	2.5 V	MOSFET (Metal Oxide)

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