Specification	SQM10250E_GE3

Current - Continuous Drain (Id) (Tc)	65 A
Drain to Source Voltage (Vdss)	250 V
Drive Voltage (Max Rds On)	7.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	75 nC
Grade	Automotive
Input Capacitance (Ciss) (Max)	4050 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Package Name	TO-263 (D2PAK)
Power Dissipation (Max)	375 W
Qualification	AEC-Q101
Rds On (Max)	30 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	3.5 V

SQM10250 Series

Part	Input Capacitance (Ciss) (Max)	Grade	Rds On (Max)	Current - Continuous Drain (Id) (Tc)	Package Name	Gate Charge (Max)	Mounting Type	Technology	Operating Temperature (Min)	Operating Temperature (Max)	FET Type	Power Dissipation (Max)	Vgs (Max)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Vgs(th) (Max)	Drain to Source Voltage (Vdss)	Package / Case	Qualification
Vishay Dale SQM10250E_GE3	4050 pF	Automotive	30 mOhm	65 A	TO-263 (D2PAK)	75 nC	Surface Mount	MOSFET (Metal Oxide)	-55 °C	175 °C	N-Channel	375 W	20 V	10 V	7.5 V	3.5 V	250 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	AEC-Q101

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