Specification	SI1480DH-T1-GE3

Current - Continuous Drain (Id) (Tc)	2.6 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	5 nC, 5 nC
Input Capacitance (Ciss) (Max)	130 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	6-TSSOP, SC-88, SOT-363
Package Name	SC-70-6
Power Dissipation (Max)	1.5 W, 2.8 W
Rds On (Max)	200 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	3 V

SI1480 Series

Part	Operating Temperature (Min)	Operating Temperature (Max)	Package Name	Current - Continuous Drain (Id) (Tc)	Package / Case	Technology	Gate Charge (Max)	Mounting Type	Drain to Source Voltage (Vdss)	FET Type	Rds On (Max)	Input Capacitance (Ciss) (Max)	Vgs(th) (Max)	Power Dissipation (Max)	Vgs (Max)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Current - Continuous Drain (Id) (Ta)
Vishay Dale SI1480DH-T1-GE3	-55 °C	150 °C	SC-70-6	2.6 A	6-TSSOP SC-88 SOT-363	MOSFET (Metal Oxide)	5 nC 5 nC	Surface Mount	100 V	N-Channel	200 mOhm	130 pF	3 V	1.5 W 2.8 W	20 V	10 V	4.5 V
Vishay Dale SI1480DH-T1-BE3	-55 °C	150 °C	SC-70-6	2.6 A	6-TSSOP SC-88 SOT-363	MOSFET (Metal Oxide)	5 nC 5 nC	Surface Mount	100 V	N-Channel	200 mOhm	130 pF	3 V	1.5 W 2.8 W	20 V			2.1 A

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