Description
General part information
FF400R12 Series
The half-bridge62 mm1200 V, 400 A dualIGBT moduleswith fast TRENCHSTOP™ IGBT3 and Emitter Controlled high efficiency diode is the right choice for your design. Also available as variation with Common Emitter:FF400R12KT3_E
Technical Specifications
Parameters and characteristics for this part
| Specification | FF400R12KT3HOSA1 |
|---|---|
| Channel Count | 2 |
| Configuration | Independent |
| Current - Collector (Ic) (Max) | 580 A |
| Current - Collector Cutoff (Max) | 5 mA |
| IGBT Type | Trench Field Stop |
| Input | Standard |
| Input Capacitance (Cies) @ Vce | 28 nF |
| Mounting Type | Chassis Mount |
| Operating Temperature (Max) | 125 °C |
| Operating Temperature (Min) | -40 °C |
| Package / Case | Module |
| Package Name | Module |
| Power - Max | 2000 W |
| Vce(on) (Max) | 2.15 V |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
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CAD
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Documents
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