PSMN071-100NSEX
ActiveN-CHANNEL 100 V, 82 MOHM STANDARD LEVEL ASFET WITH ENHANCED SOA IN DFN2020. DESIGNED FOR HIGH POWER POE, INRUSH MANAGEMENT, EFUSE AND RELAY REPLACEMENT
PSMN071-100NSEX
ActiveN-CHANNEL 100 V, 82 MOHM STANDARD LEVEL ASFET WITH ENHANCED SOA IN DFN2020. DESIGNED FOR HIGH POWER POE, INRUSH MANAGEMENT, EFUSE AND RELAY REPLACEMENT
Description
General part information
PSMN071-100NSE Series
New standards and proprietary approaches are enabling Power-over-Ethernet (PoE) systems capable of delivering up to 90 W to each powered device (PD). Such solutions place increased demands on the power sourcing equipment (PSE) in terms of "soft-start", thermal management and power density requirements. These ASFETs combine enhanced SOA in a compact 2 mm x 2 mm footprint making them ideally placed for a variety of applications including PoE, eFuse and relay replacement.
Technical Specifications
Parameters and characteristics for this part
| Specification | PSMN071-100NSEX |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 9.8 A |
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 9.5 nC |
| Input Capacitance (Ciss) (Max) | 559 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | 6-UDFN Exposed Pad |
| Package Name | DFN2020M-6 |
| Power Dissipation (Max) | 31 W |
| Rds On (Max) | 82.3 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 3.6 V |
Pricing
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