IRS21064STRPBF

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THE IRS21064S IS A 600 V HIGH-SIDE AND LOW-SIDE GATE DRIVER IC WITH SEPARATE PIN FOR LOGIC GROUND (14 LEAD SOIC PACKAGE)

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IRS21064STRPBF

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INFINEON

THE IRS21064S IS A 600 V HIGH-SIDE AND LOW-SIDE GATE DRIVER IC WITH SEPARATE PIN FOR LOGIC GROUND (14 LEAD SOIC PACKAGE)

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Description Specifications Series Pricing CAD Documents

Description

General part information

IRS21064 Series

EiceDRIVER™ 600 Vhigh and low sidegate driver ICwith typical 0.29 A source and 0.6 A sink currents in 14 Lead SOIC package forIGBTsandMOSFETs. Also available in 14 Lead PDIP, 8 Lead SOIC, and 8 Lead PDIP. For the newest version with ourSOI technologywe recommend2ED21064S06J, providing integrated bootstrap diode, better robustness and higher switching frequency

Technical Specifications

Parameters and characteristics for this part

Specification	IRS21064STRPBF

Channel Type	Independent
Current - Peak Output (Sink)	600 mA
Current - Peak Output (Source)	290 mA
Driven Configuration	Low-Side, High-Side
Fall Time (Typ)	35 ns
Gate Channel	N-Channel
Gate Type	IGBT, MOSFET, N-Channel MOSFET
High Side Voltage - Max (Bootstrap)	600 V, 1.2 kV
Input Type	Non-Inverting
Logic Voltage - VIH	2.5 V
Logic Voltage - VIL	0.8 V
Mounting Type	Surface Mount
Number of Drivers	2
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-40 °C
Package Length	0.154 in
Package Name	14-SOIC
Package Width	3.9 mm
Rise Time (Typ)	100 ns
Voltage - Supply (Maximum)	20 V
Voltage - Supply (Minimum)	10 VDC

IRS21064 Series

Part	Gate Channel	Gate Type	Mounting Type	Driven Configuration	Input Type	Package Length	Package Name	Package Width	High Side Voltage - Max (Bootstrap)	Operating Temperature (Min)	Operating Temperature (Max)	Rise Time (Typ)	Fall Time (Typ)	Channel Type	Logic Voltage - VIL	Logic Voltage - VIH	Voltage - Supply (Minimum)	Voltage - Supply (Maximum)	Number of Drivers	Current - Peak Output (Sink)	Current - Peak Output (Source)
INFINEON IRS21064PBF	N-Channel	IGBT MOSFET N-Channel MOSFET	Through Hole	High-Side Low-Side	Non-Inverting	0.3 in	14-DIP	7.62 mm	600 V	-40 °C	150 °C	100 ns	35 ns	Independent	0.8 V	2.5 V	10 VDC	20 V	2	600 mA	290 mA
INFINEON IRS21064PBF	N-Channel	IGBT MOSFET	Through Hole	High-Side Low-Side	Non-Inverting	0.3 in	14-DIP	7.62 mm	600 V	-40 °C	150 °C	100 ns	35 ns	Independent	0.8 V	2.5 V	10 VDC	20 V	2	600 mA	290 mA
INFINEON IRS21064STRPBF	N-Channel	IGBT MOSFET N-Channel MOSFET	Surface Mount	High-Side Low-Side	Non-Inverting	0.154 in	14-SOIC	3.9 mm	1.2 kV 600 V	-40 °C	150 °C	100 ns	35 ns	Independent	0.8 V	2.5 V	10 VDC	20 V	2	600 mA	290 mA

Pricing

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