Specification	C3M0280090D

Current - Continuous Drain (Id) (Tc)	11.5 A
Drain to Source Voltage (Vdss)	900 V
Drive Voltage (Max Rds On, Min Rds On)	15 V
FET Type	N-Channel
Gate Charge (Max)	9.5 nC
Input Capacitance (Ciss) (Max)	150 pF
Mounting Type	Through Hole
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-247-3
Package Name	TO-247-3
Power Dissipation (Max)	54 W
Rds On (Max)	360 mOhm
Technology	SiCFET (Silicon Carbide)
Vgs (Max) Negative	-8 V
Vgs (Max) Positive	18 V
Vgs(th) (Max)	3.5 V

C3M0280090 Series

Part	Package / Case	Drain to Source Voltage (Vdss)	Technology	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max) Positive	Vgs (Max) Negative	Mounting Type	Rds On (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Gate Charge (Max)	Input Capacitance (Ciss) (Max)	Power Dissipation (Max)	FET Type	Vgs(th) (Max)	Current - Continuous Drain (Id) (Tc)	Package Name	Package Leads
Wolfspeed, Inc. C3M0280090D	TO-247-3	900 V	SiCFET (Silicon Carbide)	15 V	18 V	-8 V	Through Hole	360 mOhm	-55 °C	150 °C	9.5 nC	150 pF	54 W	N-Channel	3.5 V	11.5 A	TO-247-3
Wolfspeed, Inc. C3M0280090J		900 V	SiCFET (Silicon Carbide)	15 V	18 V	-8 V	Surface Mount	360 mOhm	-55 °C	150 °C	9.5 nC	150 pF	50 W	N-Channel	3.5 V	11 A	D2PAK TO-263-7	7 Leads
Wolfspeed, Inc. C3M0280090J-TR		900 V	SiCFET (Silicon Carbide)	15 V	18 V	-8 V	Surface Mount	360 mOhm	-55 °C	150 °C	9.5 nC	150 pF	50 W	N-Channel	3.5 V	11 A	D2PAK TO-263-7	7 Leads

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