Part	Vgs (Max)	Qualification	Technology	Current - Continuous Drain (Id) (Tc)	Drain to Source Voltage (Vdss)	Vgs(th) (Max)	Mounting Type	FET Type	Input Capacitance (Ciss) (Max)	Rds On (Max)	Grade	Operating Temperature (Min)	Operating Temperature (Max)	Drive Voltage (Max Rds On, Min Rds On)	Package Name	Power Dissipation (Max)	Package / Case	Gate Charge (Max)
NXP USA Inc. BUK768R1-40E/GFJ
NXP USA Inc. BUK7620-100A,118	20 V	AEC-Q101	MOSFET (Metal Oxide)	63 A	100 V	4 V	Surface Mount	N-Channel	4373 pF	20 mOhm	Automotive	-55 °C	175 °C	10 V	D2PAK	200 W	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB
NXP USA Inc. BUK7619-100B,118	20 V	AEC-Q101	MOSFET (Metal Oxide)	64 A	100 V	4 V	Surface Mount	N-Channel	3400 pF	19 mOhm	Automotive	-55 °C	175 °C	10 V	D2PAK	200 W	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	53 nC
NXP USA Inc. BUK7624-55A,118	20 V	AEC-Q101	MOSFET (Metal Oxide)	47 A	55 V	4 V	Surface Mount	N-Channel	1310 pF	24 mOhm	Automotive	-55 °C	175 °C	10 V	D2PAK	106 W	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB
NXP USA Inc. BUK7608-40B,118
NXP USA Inc. BUK7616-55A,118	20 V		MOSFET (Metal Oxide)	65.7 A	55 V	4 V	Surface Mount	N-Channel	2245 pF	16 mOhm		-55 °C	175 °C	10 V	D2PAK	138 W	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB
NXP USA Inc. BUK7605-30A,118	20 V		MOSFET (Metal Oxide)	75 A	30 V	4 V	Surface Mount	N-Channel	6000 pF	5 mOhm		-55 °C	175 °C	10 V	D2PAK	230 W	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB
NXP USA Inc. BUK7620-100A,118
NXP USA Inc. BUK761R4-30E,118	20 V	AEC-Q101	MOSFET (Metal Oxide)	120 A	30 V	4 V	Surface Mount	N-Channel	9580 pF	1.45 mOhm	Automotive	-55 °C	175 °C	10 V	D2PAK	324 W	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	130 nC
NXP USA Inc. BUK7609-55A,118	20 V	AEC-Q101	MOSFET (Metal Oxide)	75 A	55 V	4 V	Surface Mount	N-Channel	3271 pF	9 mOhm	Automotive	-55 °C	175 °C	10 V	D2PAK	211 W	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	62 nC

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