1N4007GPP TR

Obsolete

Central Semiconductor Corp

DIODE GEN PURP 1KV 1A DO41

Search across all available documentation for this part.

Obsolete

Central Semiconductor Corp

DIODE GEN PURP 1KV 1A DO41

Technical Specifications

Parameters and characteristics commom to parts in this series

Specification	1N4007GPP TR	1N4007 Series

Capacitance @ Vr, F	8 pF	8 pF
Current - Average Rectified (Io)	1 A	1 A
Current - Reverse Leakage @ Vr	5 µA	5 µA
Mounting Type	Through Hole	Through Hole
Operating Temperature - Junction [Max]	175 ░C	175 ░C
Operating Temperature - Junction [Min]	-65 C	-65 C
Package / Case	DO-204AL, DO-41, Axial	DO-204AL, DO-41, Axial
Reverse Recovery Time (trr)	2 µs	2 µs
Speed	Standard Recovery >500ns	Standard Recovery >500ns
Speed	200 mA	200 mA
Supplier Device Package	DO-41	DO-41
Technology	Standard	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	1000 V	1000 V
Voltage - Forward (Vf) (Max) @ If	1.1 V	1.1 V

DIODE GEN PURP 1KV 1A DO41

Part	Speed	Speed	Supplier Device Package	Voltage - DC Reverse (Vr) (Max) [Max]	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Current - Reverse Leakage @ Vr	Voltage - Forward (Vf) (Max) @ If	Mounting Type	Package / Case	Current - Average Rectified (Io)	Technology	Reverse Recovery Time (trr)	Capacitance @ Vr, F
Central Semiconductor Corp 1N4007 BK	Standard Recovery >500ns	200 mA	DO-41	1000 V	175 ░C	-65 C	5 µA	1.1 V	Through Hole	Axial, DO-204AL, DO-41	1 A	Standard
Central Semiconductor Corp 1N4007GPP TR	Standard Recovery >500ns	200 mA	DO-41	1000 V	175 ░C	-65 C	5 µA	1.1 V	Through Hole	Axial, DO-204AL, DO-41	1 A	Standard	2 µs	8 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 1000 V 1A Through Hole DO-41

Technical documentation and resources