SI4943 Series

Part	Technology	FET Feature	Channel Count	Configuration	Configuration - Features	Gate Charge (Max)	Package Name	Drain to Source Voltage (Vdss)	Power - Max	Operating Temperature (Min)	Operating Temperature (Max)	Package Length	Package Width	Vgs(th) (Max)	Input Capacitance (Ciss) (Max)	Current - Continuous Drain (Id)	Mounting Type	Rds On (Max)
Vishay Dale SI4943CDY-T1-E3	MOSFET (Metal Oxide)	Logic Level Gate	2	P-Channel	Dual	62 nC	8-SOIC	20 V	3.1 W	-50 °C	150 °C	0.154 in	3.9 mm	3 V	1945 pF	8 A	Surface Mount	19.2 mOhm
Vishay Dale SI4943BDY-T1-GE3	MOSFET (Metal Oxide)	Logic Level Gate	2	P-Channel	Dual	25 nC	8-SOIC	20 V	1.1 W	-55 °C	150 °C	0.154 in	3.9 mm	3 V		6.3 A	Surface Mount	19 mOhm

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