Specification	SIHF15N65E-GE3

Current - Continuous Drain (Id) (Tc)	15 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	96 nC
Input Capacitance (Ciss) (Max)	1640 pF
Mounting Type	Through Hole
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-220-3 Full Pack
Package Name	TO-220 Full Pack
Power Dissipation (Max)	34 W
Rds On (Max)	280 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max)	4 V

SIHF15 Series

Part	Vgs (Max)	Vgs(th) (Max)	FET Type	Input Capacitance (Ciss) (Max)	Technology	Rds On (Max)	Package / Case	Package Name	Mounting Type	Gate Charge (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Power Dissipation (Max)	Current - Continuous Drain (Id) (Tc)	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)
Vishay Dale SIHF15N60E-GE3	30 V	4 V	N-Channel	1350 pF 1350 pF	MOSFET (Metal Oxide)	280 mOhm	TO-220-3 Full Pack	TO-220 Full Pack	Through Hole	78 nC	-55 °C	150 °C	34 W	15 A	600 V	10 V
Vishay Dale SIHF15N65E-GE3	30 V	4 V	N-Channel	1640 pF	MOSFET (Metal Oxide)	280 mOhm	TO-220-3 Full Pack	TO-220 Full Pack	Through Hole	96 nC	-55 °C	150 °C	34 W	15 A	650 V	10 V

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