IR2181SPBF

NRND

INFINEON

THE IR2181S IS A 600 V HIGH-SIDE AND LOW-SIDE GATE DRIVER IC (8 LEAD SOIC PACKAGE)

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IR2181SPBF

NRND

INFINEON

THE IR2181S IS A 600 V HIGH-SIDE AND LOW-SIDE GATE DRIVER IC (8 LEAD SOIC PACKAGE)

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Description Specifications Series Pricing CAD Documents

Description

General part information

IR2181 Series

EiceDRIVER™ 600 V high and low-sideGate Driver ICwith typical 1.9 A source and 2.3 A sink currents in 8 Lead SOIC package forIGBTsandMOSFETs. Also available in 8 Lead PDIP, 14 Lead SOIC, and 14-Lead PDIP . For the new version with ourSOI technologywe recommend2ED2181S06F, providing integrated bootstrap diode, better robustness and higher switching frequency

Technical Specifications

Parameters and characteristics for this part

Specification	IR2181SPBF

Channel Type	Independent
Current - Peak Output (Sink)	2.3 A
Current - Peak Output (Source)	1.9 A
Driven Configuration	Half-Bridge
Fall Time (Typ)	20 ns
Gate Channel	N-Channel
Gate Type	IGBT, N-Channel MOSFET, MOSFET
High Side Voltage - Max (Bootstrap)	600 V
Input Type	Non-Inverting
Logic Voltage - VIH	2.7 V
Logic Voltage - VIL	0.8 V
Mounting Type	Surface Mount
Number of Drivers	2
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-40 °C
Package Length	0.154 in
Package Name	8-SOIC
Package Width	3.9 mm
Rise Time (Typ)	40 ns
Voltage - Supply (Maximum)	20 V
Voltage - Supply (Minimum)	10 VDC

IR2181 Series

Part	Gate Type	Channel Type	Current - Peak Output (Source)	Current - Peak Output (Sink)	High Side Voltage - Max (Bootstrap)	Voltage - Supply (Minimum)	Voltage - Supply (Maximum)	Logic Voltage - VIL	Logic Voltage - VIH	Driven Configuration	Gate Channel	Package Length	Package Name	Package Width	Mounting Type	Operating Temperature (Min)	Operating Temperature (Max)	Input Type	Number of Drivers	Rise Time (Typ)	Fall Time (Typ)
INFINEON IR2181PBF	IGBT MOSFET N-Channel MOSFET	Independent	1.9 A	2.3 A	600 V	10 VDC	20 V	0.8 V	2.7 V	Half-Bridge	N-Channel	0.3 in	8-DIP 8-PDIP	7.62 mm	Through Hole	-40 °C	150 °C	Non-Inverting	2	40 ns	20 ns
INFINEON IR2181PBF	IGBT MOSFET N-Channel MOSFET	Independent	1.9 A	2.3 A	600 V	10 VDC	20 V	0.8 V	2.7 V	Half-Bridge	N-Channel	0.3 in	8-DIP 8-PDIP	7.62 mm	Through Hole	-40 °C	150 °C	Non-Inverting	2	40 ns	20 ns
INFINEON IR2181	IGBT MOSFET N-Channel MOSFET	Independent	1.9 A	2.3 A	600 V	10 VDC	20 V	0.8 V	2.7 V	Half-Bridge	N-Channel	0.3 in	8-DIP 8-PDIP	7.62 mm	Through Hole	-40 °C	150 °C	Non-Inverting	2	40 ns	20 ns
INFINEON IR2181STRPBF	IGBT MOSFET N-Channel MOSFET	Independent	1.9 A	2.3 A	600 V	10 VDC	20 V	0.8 V	2.7 V	Half-Bridge	N-Channel	0.154 in	8-SOIC	3.9 mm	Surface Mount	-40 °C	150 °C	Non-Inverting	2	40 ns	20 ns
INFINEON IR2181SPBF	IGBT MOSFET N-Channel MOSFET	Independent	1.9 A	2.3 A	600 V	10 VDC	20 V	0.8 V	2.7 V	Half-Bridge	N-Channel	0.154 in	8-SOIC	3.9 mm	Surface Mount	-40 °C	150 °C	Non-Inverting	2	40 ns	20 ns

Pricing

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CAD

3D models and CAD resources for this part

Documents

Technical documentation and resources

IR2181SPBF | Datasheet

Datasheet