Description
General part information
IPB407 Series
OptiMOS™ 300V MOSFETs, incorporating fast diode technology, are especially optimized for body diode hard commutation. The devices not only demonstrate impressive on-state resistance (RDS(on)) and figure of merit (FOM), but also provide high system reliability through the lowest reverse recovery charge (Qrr) available on the market. With the 300V OptiMOS™ series, Infineon brings a new level of performance in hard switching applications such as telecom, uninterruptible power supplies (UPS), industrial power supplies, DC-AC inverters and motor control.
Technical Specifications
Parameters and characteristics for this part
| Specification | IPB407N30NATMA1 |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 44 A |
| Drain to Source Voltage (Vdss) | 300 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 87 nC |
| Input Capacitance (Ciss) (Max) | 7180 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | D2PAK (2 Leads + Tab), TO-263-3, TO-263AB |
| Package Name | PG-TO263-3 |
| Power Dissipation (Max) | 300 W |
| Rds On (Max) | 40.7 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 4 V |
Pricing
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