BUK9Y22-100E,115

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Nexperia USA Inc.

N-CHANNEL 100 V, 22 MΩ LOGIC LEVEL MOSFET IN LFPAK56

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BUK9Y22-100E,115

Active

Nexperia USA Inc.

N-CHANNEL 100 V, 22 MΩ LOGIC LEVEL MOSFET IN LFPAK56

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Description Specifications Series Pricing CAD Documents

Description

General part information

BUK9Y22-100E Series

Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.

Technical Specifications

Parameters and characteristics for this part

Specification	BUK9Y22-100E,115

Current - Continuous Drain (Id) (Tc)	49 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	5 V
FET Type	N-Channel
Gate Charge (Max)	35.8 nC
Grade	Automotive
Input Capacitance (Ciss) (Max)	4640 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	SOT-669, SC-100
Package Name	LFPAK56, Power-SO8
Power Dissipation (Max)	147 W
Qualification	AEC-Q101
Rds On (Max)	21.5 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	10 V
Vgs(th) (Max)	2.1 V

BUK9Y22-100E Series

N-channel 100 V, 22 mΩ logic level MOSFET in LFPAK56

Part	Drive Voltage (Max Rds On, Min Rds On)	Qualification	Mounting Type	Current - Continuous Drain (Id) (Tc)	Input Capacitance (Ciss) (Max)	Vgs (Max)	Rds On (Max)	Grade	Vgs(th) (Max)	Gate Charge (Max)	FET Type	Package / Case	Power Dissipation (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Drain to Source Voltage (Vdss)	Package Name	Technology
Nexperia USA Inc. BUK9Y22-100E,115	5 V	AEC-Q101	Surface Mount	49 A	4640 pF	10 V	21.5 mOhm	Automotive	2.1 V	35.8 nC	N-Channel	SC-100 SOT-669	147 W	-55 °C	175 °C	100 V	LFPAK56 Power-SO8	MOSFET (Metal Oxide)