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BSC009NE2LS5IATMA1

BSC009NE2LS5IATMA1

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INFINEON

OPTIMOS™ 5 N-CHANNEL POWER MOSFET 25 V ; SUPERSO8 5X6 PACKAGE; 0.95 MOHM; MONOLITHICALLY INTEGRATED SCHOTTKY-LIKE DIODE

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BSC009NE2LS5IATMA1

BSC009NE2LS5IATMA1

Active
INFINEON

OPTIMOS™ 5 N-CHANNEL POWER MOSFET 25 V ; SUPERSO8 5X6 PACKAGE; 0.95 MOHM; MONOLITHICALLY INTEGRATED SCHOTTKY-LIKE DIODE

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Description

General part information

BSC009 Series

With the OptiMOS™ 5 25V and 30V product family, Infineon offers benchmark solutions by enabling highest power density and energy efficiency, both in standby and full operation.

Technical Specifications

Parameters and characteristics for this part

SpecificationBSC009NE2LS5IATMA1
Current - Continuous Drain (Id) (Ta)40 A, 40 A
Current - Continuous Drain (Id) (Tc)217 A, 100 A
Drain to Source Voltage (Vdss)25 V
Drive Voltage (Max Rds On)4.5 V
Drive Voltage (Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)49 nC, 49 nC
Input Capacitance (Ciss) (Max)3200 pF
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / Case8-PowerTDFN
Package NamePG-TDSON-8-7
Power Dissipation (Max)74 W, 2.5 W
Rds On (Max)0.95 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)16 V
Vgs(th) (Max)2 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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CAD

3D models and CAD resources for this part