TPN7R006PL,L1Q
ActiveToshiba Semiconductor and Storage
12V - 300V MOSFETS, N-CH MOSFET, 60 V, 0.007 Ω@10V, TSON ADVANCE, U-MOSⅨ-H
TPN7R006PL,L1Q
ActiveToshiba Semiconductor and Storage
12V - 300V MOSFETS, N-CH MOSFET, 60 V, 0.007 Ω@10V, TSON ADVANCE, U-MOSⅨ-H
Description
General part information
TPN7R006PL Series
12V - 300V MOSFETs, N-ch MOSFET, 60 V, 0.007 Ω@10V, TSON Advance, U-MOSⅨ-H
Technical Specifications
Parameters and characteristics for this part
| Specification | TPN7R006PL,L1Q |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 54 A, 54 A |
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On) | 4.5 V |
| Drive Voltage (Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 20 nC |
| Input Capacitance (Ciss) (Max) | 1875 pF |
| Mounting Type | Surface Mount |
| Operating Temperature | 175 °C |
| Package / Case | 8-PowerVDFN |
| Package Length | 3.1 mm |
| Package Name | 8-TSON Advance |
| Package Width | 3.1 mm |
| Power Dissipation (Max) | 630 mW, 75 W |
| Rds On (Max) | 7 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 2.5 V |
Pricing
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CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources
Simplified CFD Model Application Note
Selecting MOSFETs and Consideration for Circuit Design: Power MOSFET Application Notes
Hints and Tips for Thermal Design for Discrete Semiconductor Devices
Reverse Recovery Operation and Destruction of MOSFET Body Diode
Selection Guide MOSFETs 2025 Rev1.0
Quick Reference Guide for Thermal Design for Power Semiconductor SMD type: Part 2
U-MOSⅨ-H 60V Low VDS spike TPH1R306P1
Thermal Design and Attachment of a Thermal Fin: Power MOSFET Application Notes
Parasitic Oscillation and Ringing: Power MOSFET Application Notes
Structures and Characteristics: Power MOSFET Application Notes
Motor Control (Vacuum Cleaners)
Avalanche energy calculation
MOSFET Self-Turn-On Phenomenon
MOSFET Secondary Breakdown
Maximum Ratings: Power MOSFET Application Notes
Derating of the MOSFET Safe Operating Area
TPN7R006PL Data sheet/English
Parasitic Oscillation between Parallel Power MOSFETs: Power MOSFET Application Notes
MOSFET Avalanche Ruggedness: Power MOSFET Application Notes
RC Snubbers for Step-Down Converters
Resonant Circuits and Soft Switching
Calculating the Temperature of Discrete Semiconductor Devices
TPN7R006PL Data sheet/Japanese
Impacts of the dv/dt Rate on MOSFETs: Power MOSFET Application Notes
Efficiency Evaluation and Loss Analysis of 300W isolated DC-DC converter
Discrete Semiconductor Devices Hints and Tips for Thermal Design Part 2
Efficiency evaluation of Half-bridge DC-DC converter supporting 48V Bus system
Electrical Characteristics: Power MOSFET Application Notes
MOSFET SPICE model grade
Quick Reference Guide for Thermal Design for Discrete Semiconductor Devices
MOSFET Gate Drive Circuit: Power MOSFET Application Notes
Hints and Tips for Thermal Design part3