Specification	IRF9640STRL

Current - Continuous Drain (Id) (Tc)	11 A
Drain to Source Voltage (Vdss)	200 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	P-Channel
Gate Charge (Max)	44 nC, 44 nC
Input Capacitance (Ciss) (Max)	1200 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Package Name	TO-263 (D2PAK)
Power Dissipation (Max)	125 W, 3 W
Rds On (Max)	500 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	4 V

IRF9640 Series

Part	Vgs (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Power Dissipation (Max)	Technology	FET Type	Package Name	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Max)	Mounting Type	Input Capacitance (Ciss) (Max)	Current - Continuous Drain (Id) (Tc)	Drain to Source Voltage (Vdss)	Package / Case	Rds On (Max)	Vgs(th) (Max)
Vishay Dale IRF9640	20 V	-55 °C	150 °C	125 W	MOSFET (Metal Oxide)	P-Channel	TO-220AB	10 V	44 nC 44 nC	Through Hole	1200 pF	11 A	200 V	TO-220-3	500 mOhm	4 V
Vishay Dale IRF9640STRR	20 V	-55 °C	150 °C	3 W 125 W	MOSFET (Metal Oxide)	P-Channel	TO-263 (D2PAK)	10 V	44 nC 44 nC	Surface Mount	1200 pF	11 A	200 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	500 mOhm	4 V
Vishay Dale IRF9640SPBF	20 V	-55 °C	150 °C	3 W 125 W	MOSFET (Metal Oxide)	P-Channel	TO-263 (D2PAK)	10 V	44 nC 44 nC	Surface Mount	1200 pF	11 A	200 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	500 mOhm	4 V
Vishay Dale IRF9640PBF	20 V	-55 °C	150 °C	125 W	MOSFET (Metal Oxide)	P-Channel	TO-220AB	10 V	44 nC 44 nC	Through Hole	1200 pF	11 A	200 V	TO-220-3	500 mOhm	4 V
Vishay Dale IRF9640LPBF	20 V	-55 °C	150 °C	3 W 125 W	MOSFET (Metal Oxide)	P-Channel	I2PAK	10 V	44 nC 44 nC	Through Hole	1200 pF	11 A	200 V	I2PAK TO-262-3 Long Leads TO-262AA	500 mOhm	4 V
Vishay Dale IRF9640STRL	20 V	-55 °C	150 °C	3 W 125 W	MOSFET (Metal Oxide)	P-Channel	TO-263 (D2PAK)	10 V	44 nC 44 nC	Surface Mount	1200 pF	11 A	200 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	500 mOhm	4 V
Vishay Dale IRF9640PBF-BE3	20 V	-55 °C	150 °C	125 W	MOSFET (Metal Oxide)	P-Channel	TO-220AB	10 V	44 nC 44 nC	Through Hole	1200 pF	11 A	200 V	TO-220-3	500 mOhm	4 V

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