BCR169SH6327XTSA1

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Infineon Technologies

TRANS 2PNP PREBIAS 0.25W SOT363

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Unknown

Infineon Technologies

TRANS 2PNP PREBIAS 0.25W SOT363

Technical Specifications

Parameters and characteristics for this part

Specification	BCR169SH6327XTSA1

Current - Collector (Ic) (Max) [Max]	100 mA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	120
Frequency - Transition	200 MHz
Mounting Type	Surface Mount
Package / Case	6-VSSOP, SC-88, SOT-363
Power - Max [Max]	250 mW
Resistor - Base (R1)	4.7 kOhms
Supplier Device Package	PG-SOT363-PO
Transistor Type	2 PNP - Pre-Biased (Dual)
Vce Saturation (Max) @ Ib, Ic	300 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

Part	Package / Case	Frequency - Transition	Resistor - Base (R1)	Current - Collector Cutoff (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Power - Max [Max]	Transistor Type	Mounting Type	Current - Collector (Ic) (Max) [Max]	Supplier Device Package	Vce Saturation (Max) @ Ib, Ic	Voltage - Collector Emitter Breakdown (Max) [Max]	Qualification	Grade
Infineon Technologies BCR169WH6327XTSA1	SC-70 SOT-323	200 MHz	4.7 kOhms	100 nA	120	250 mW	PNP - Pre-Biased	Surface Mount	100 mA	PG-SOT323	300 mV	50 V
Infineon Technologies BCR169WE6327	SC-70 SOT-323	200 MHz	4.7 kOhms	100 nA	120	250 mW	PNP - Pre-Biased	Surface Mount	100 mA	PG-SOT323-3-1	300 mV	50 V	AEC-Q101	Automotive
Infineon Technologies BCR169SH6327XTSA1	6-VSSOP SC-88 SOT-363	200 MHz	4.7 kOhms		120	250 mW	2 PNP - Pre-Biased (Dual)	Surface Mount	100 mA	PG-SOT363-PO	300 mV	50 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 200MHz 250mW Surface Mount PG-SOT363-PO

Technical documentation and resources

No documents available