Description
General part information
BAT1704 Series
These Infineon RF Schottky diodes are silicon low barrier N-type devices with an integrated guard ring on-chip for overvoltage protection. Their low barrier height, small forward voltage and low junction capacitance, make BAT17-04W a suitable choice for mixer and detector applications at frequencies as high as 6 GHz.
Technical Specifications
Parameters and characteristics for this part
| Specification | BAT1704WH6327XTSA1 |
|---|---|
| Capacitance | 0.75 pF |
| Current - Max | 130 mA |
| Diode Pair Configuration | Series Connection |
| Diode Pair Count | 1 |
| Diode Type | Schottky |
| Operating Temperature | 150 °C |
| Package / Case | SC-70, SOT-323 |
| Package Name | PG-SOT323 |
| Power Dissipation (Max) | 150 mW |
| Resistance | 15 Ohm |
| Voltage - Peak Reverse (Max) | 4 V |
Pricing
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CAD
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