Description
General part information
BFP640 Series
The BFP640FESD is a Silicon Germanium Carbon (SiGe:C) NPN Heterojunction wideband Bipolar RF Transistor (HBT) in a plastic thin small flat 4-pin dual emitter package with visible leads. The device is fitted with internal protection circuits, which enhance robustness against ESD and high RF input power strongly. The device combines robustness with very high RF gain and lowest noise figure at low operation current for use in a wide range of wireless applications. The BFP640FESD is especially well-suited for portable battery-powered applications in which reduced power consumption is a key requirement. Device design supports collector voltages up to 4.1 V.
Technical Specifications
Parameters and characteristics for this part
| Specification | BFP640FESDH6327XTSA1 |
|---|---|
| Current - Collector (Ic) (Max) | 0.05 mA |
| DC Current Gain (hFE) (Min) | 110 |
| Frequency - Transition | 46 GHz |
| Gain (Max) | 30.5 dB |
| Gain (Min) | 8 B |
| Mounting Type | Surface Mount |
| Noise Figure (Typical) Maximum | 1.7 dB |
| Noise Figure (Typical) Minimum | 0.55 dB |
| Operating Temperature | 150 °C |
| Package / Case | 4-SMD, Flat Leads |
| Package Name | 4-TSFP |
| Power - Max | 200 mW |
| Transistor Type | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 4.7 V |
Pricing
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