Specification	IRF5305STRLPBF

Current - Continuous Drain (Id) (Tc)	31 A
Drain to Source Voltage (Vdss)	55 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	P-Channel
Gate Charge (Max)	63 nC
Input Capacitance (Ciss) (Max)	1200 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Package Name	D2PAK
Power Dissipation (Max)	3.8 W, 110 W
Rds On (Max)	60 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	4 V

IRF5305 Series

Part	Drain to Source Voltage (Vdss)	Package Name	Package / Case	Vgs (Max)	Gate Charge (Max)	Vgs(th) (Max)	FET Type	Mounting Type	Technology	Rds On (Max)	Power Dissipation (Max)	Input Capacitance (Ciss) (Max)	Current - Continuous Drain (Id) (Tc)	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature (Min)	Operating Temperature (Max)
INFINEON IRF5305SPBF	55 V	D2PAK	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	20 V	63 nC	4 V	P-Channel	Surface Mount	MOSFET (Metal Oxide)	60 mOhm	3.8 W 110 W	1200 pF	31 A	10 V	-55 °C	175 °C
INFINEON IRF5305PBF	55 V	TO-220AB	TO-220-3	20 V	63 nC	4 V	P-Channel	Through Hole	MOSFET (Metal Oxide)	60 mOhm	110 W	1200 pF	31 A	10 V	-55 °C	155 °C 175 °C
INFINEON IRF5305STRLPBF	55 V	D2PAK	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	20 V	63 nC	4 V	P-Channel	Surface Mount	MOSFET (Metal Oxide)	60 mOhm	3.8 W 110 W	1200 pF	31 A	10 V	-55 °C	175 °C
INFINEON IRF5305STRRPBF	55 V	D2PAK	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	20 V	63 nC	4 V	P-Channel	Surface Mount	MOSFET (Metal Oxide)	60 mOhm	3.8 W 110 W	1200 pF	31 A	10 V	-55 °C	175 °C
INFINEON IRF5305STRR	55 V	D2PAK	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	20 V	63 nC	4 V	P-Channel	Surface Mount	MOSFET (Metal Oxide)	60 mOhm	3.8 W 110 W	1200 pF	31 A	10 V	-55 °C	175 °C

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