BUK9Y38-100E,115

Active

Nexperia USA Inc.

N-CHANNEL 100 V, 38 MΩ LOGIC LEVEL MOSFET IN LFPAK56

Find alt

Alpha

BUK9Y38-100E,115

Active

Nexperia USA Inc.

N-CHANNEL 100 V, 38 MΩ LOGIC LEVEL MOSFET IN LFPAK56

Find alt

Alpha

Description Specifications Series Pricing CAD Documents

Description

General part information

BUK9Y38-100E Series

Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.

Technical Specifications

Parameters and characteristics for this part

Specification	BUK9Y38-100E,115

Current - Continuous Drain (Id) (Tc)	30 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On)	5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	21.6 nC
Grade	Automotive
Input Capacitance (Ciss) (Max)	2541 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	SOT-669, SC-100
Package Name	LFPAK56, Power-SO8
Power Dissipation (Max)	94.9 W
Qualification	AEC-Q101
Rds On (Max)	38 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	10 V
Vgs(th) (Max)	2.1 V

BUK9Y38-100E Series

N-channel 100 V, 38 mΩ logic level MOSFET in LFPAK56

Part	Package / Case	Power Dissipation (Max)	Grade	Qualification	Mounting Type	Gate Charge (Max)	Package Name	Current - Continuous Drain (Id) (Tc)	Vgs(th) (Max)	Rds On (Max)	Input Capacitance (Ciss) (Max)	Technology	FET Type	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Drain to Source Voltage (Vdss)	Vgs (Max)	Operating Temperature (Min)	Operating Temperature (Max)
Nexperia USA Inc. BUK9Y38-100E,115	SC-100 SOT-669	94.9 W	Automotive	AEC-Q101	Surface Mount	21.6 nC	LFPAK56 Power-SO8	30 A	2.1 V	38 mOhm	2541 pF	MOSFET (Metal Oxide)	N-Channel	10 V	5 V	100 V	10 V	-55 °C	175 °C