Description
General part information
IST006 Series
TheOptiMOS™ 6 power MOSFET40V insTOLLpackage features very low RDS(on)of 0.60mOhm and 475A high current capability. It has the advantages of Infineon’s well-known quality level for robust industry packages making it the ideal solution for various performance in battery powered applications, battery protection and battery formation. The improved RDS(on)and IDratings, continuous and pulsed, enable increased battery run time and higher power density.
Technical Specifications
Parameters and characteristics for this part
| Specification | IST006N04NM6AUMA1 |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 58 A |
| Current - Continuous Drain (Id) (Tc) | 475 A |
| Drain to Source Voltage (Vdss) | 40 V |
| Drive Voltage (Max Rds On) | 6 V |
| Drive Voltage (Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 178 nC |
| Input Capacitance (Ciss) (Max) | 8800 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | 5-PowerSFN |
| Package Name | PG-HSOF-5-4 |
| Power Dissipation (Max) | 3.8 W, 250 W |
| Rds On (Max) | 0.6 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 3.3 V |
Pricing
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