Specification	IPB230N06L3GATMA1

Current - Continuous Drain (Id) (Tc)	30 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	10 nC
Input Capacitance (Ciss) (Max)	1600 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Package Name	PG-TO263-3
Power Dissipation (Max)	36 W
Rds On (Max)	23 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	2.2 V

IPB130N Series

Part	FET Type	Gate Charge (Max)	Current - Continuous Drain (Id) (Tc)	Drain to Source Voltage (Vdss)	Package / Case	Input Capacitance (Ciss) (Max)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Operating Temperature (Min)	Operating Temperature (Max)	Mounting Type	Vgs (Max)	Technology	Vgs(th) (Max)	Package Name	Rds On (Max)	Power Dissipation (Max)
INFINEON IPB230N06L3GATMA1	N-Channel	10 nC	30 A	60 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	1600 pF	10 V	4.5 V	-55 °C	175 °C	Surface Mount	20 V	MOSFET (Metal Oxide)	2.2 V	PG-TO263-3	23 mOhm	36 W

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