Specification	IRF6722MTRPBF

Current - Continuous Drain (Id) (Ta)	13 A
Current - Continuous Drain (Id) (Tc)	56 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	17 nC, 17 nC
Input Capacitance (Ciss) (Max)	1300 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-40 °C
Package / Case	DirectFET™ Isometric MP
Package Name	DIRECTFET™ MP
Power Dissipation (Max)	42 W, 2.3 W
Rds On (Max)	7.7 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	2.4 V

IRF6722 Series

Part	Mounting Type	Input Capacitance (Ciss) (Max)	FET Type	Vgs(th) (Max)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Operating Temperature (Min)	Operating Temperature (Max)	Current - Continuous Drain (Id) (Tc)	Current - Continuous Drain (Id) (Ta)	Rds On (Max)	Package / Case	Drain to Source Voltage (Vdss)	Package Name	Gate Charge (Max)	Technology	Power Dissipation (Max)	Vgs (Max)
INFINEON IRF6722MTRPBF	Surface Mount	1300 pF	N-Channel	2.4 V	10 V	4.5 V	-40 °C	150 °C	56 A	13 A	7.7 mOhm	DirectFET™ Isometric MP	30 V	DIRECTFET™ MP	17 nC 17 nC	MOSFET (Metal Oxide)	2.3 W 42 W	20 V
INFINEON IRF6722MTRPBF	Surface Mount	1300 pF	N-Channel	2.4 V	10 V	4.5 V	-40 °C	150 °C	56 A	13 A	7.7 mOhm	DirectFET™ Isometric MP	30 V	DIRECTFET™ MP	17 nC 17 nC	MOSFET (Metal Oxide)	2.3 W 42 W	20 V

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