CRH01(TE85L)

Obsolete

Toshiba Semiconductor and Storage

DIODE SWITCHING 200V 1A SFLAT

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Obsolete

Toshiba Semiconductor and Storage

DIODE SWITCHING 200V 1A SFLAT

Technical Specifications

Parameters and characteristics for this part

Specification	CRH01(TE85L)

Current - Average Rectified (Io)	1 A
Current - Reverse Leakage @ Vr	10 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-40 °C
Package / Case	SOD-123F
Reverse Recovery Time (trr)	35 ns
Speed	200 mA, 500 ns
Supplier Device Package	S-FLAT (1.6x3.5)
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	200 V

Part	Current - Reverse Leakage @ Vr	Technology	Supplier Device Package	Speed	Current - Average Rectified (Io)	Mounting Type	Package / Case	Voltage - DC Reverse (Vr) (Max) [Max]	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Reverse Recovery Time (trr)
Toshiba Semiconductor and Storage CRH01(TE85L)	10 µA	Standard	S-FLAT (1.6x3.5)	200 mA 500 ns	1 A	Surface Mount	SOD-123F	200 V	150 °C	-40 °C	35 ns

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 200 V 1A Surface Mount S-FLAT (1.6x3.5)

Technical documentation and resources