Specification	IRFD9010PBF

Current - Continuous Drain (Id) (Tc)	1.1 A
Drain to Source Voltage (Vdss)	50 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	P-Channel
Gate Charge (Max)	11 nC
Input Capacitance (Ciss) (Max)	240 pF
Mounting Type	Through Hole
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package Length	0.3 in
Package Name	4-DIP, 4-HVMDIP
Package Width	7.62 mm
Power Dissipation (Max)	1 W
Rds On (Max)	500 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	4 V

IRFD9010 Series

Part	Package Width	Package Name	Package Length	Drain to Source Voltage (Vdss)	Technology	Mounting Type	Current - Continuous Drain (Id) (Tc)	FET Type	Gate Charge (Max)	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Rds On (Max)	Input Capacitance (Ciss) (Max)	Vgs(th) (Max)
Vishay Dale IRFD9010PBF	7.62 mm	4-DIP 4-HVMDIP	0.3 in	50 V	MOSFET (Metal Oxide)	Through Hole	1.1 A	P-Channel	11 nC	1 W	10 V	20 V	-55 °C	150 °C	500 mOhm	240 pF	4 V

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