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BZT52B3V9-G RHG

BZT52B3V9-G RHG

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Taiwan Semiconductor Corporation

ZENER DIODES 410MW, 2%, SMALL SIGNAL ZENER DIODE

BZT52B3V9-G RHG

BZT52B3V9-G RHG

Active

Taiwan Semiconductor Corporation

ZENER DIODES 410MW, 2%, SMALL SIGNAL ZENER DIODE

Description Specifications Series Pricing CAD Documents

Description

General part information

BZT52B-G Series

ZENER DIODES 410MW, 2%, SMALL SIGNAL ZENER DIODE

Technical Specifications

Parameters and characteristics for this part

Specification	BZT52B3V9-G RHG

Current - Reverse Leakage	3 µA
Impedance (Max) (Zzt)	90 Ohms
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	SOD-123
Package Name	SOD-123
Power - Max	410 mW
Tolerance	2 %
Voltage - Forward (Vf) (Max)	900 mV
Voltage - Zener (Nom) (Vz)	3.9 V

Pricing

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CAD

3D models and CAD resources for this part

Documents

Technical documentation and resources

BZT52B3V9-G RHG | Datasheet

BZT52B-G Series

Part	Package / Case	Voltage - Forward (Vf) (Max)	Power - Max	Tolerance	Impedance (Max) (Zzt)	Mounting Type	Voltage - Zener (Nom) (Vz)	Operating Temperature (Min)	Operating Temperature (Max)	Current - Reverse Leakage	Package Name
Taiwan Semiconductor Corporation BZT52B30-G RHG	SOD-123	900 mV	410 mW	2 %	80 Ohms	Surface Mount	30 V	-55 °C	150 °C	100 nA	SOD-123
Taiwan Semiconductor Corporation BZT52B3V9-G RHG	SOD-123	900 mV	410 mW	2 %	90 Ohms	Surface Mount	3.9 V	-55 °C	150 °C	3 µA	SOD-123