Specification	IRF2807STRLPBF

Current - Continuous Drain (Id) (Tc)	82 A
Drain to Source Voltage (Vdss)	75 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	160 nC
Input Capacitance (Ciss) (Max)	3820 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Package Name	D2PAK
Power Dissipation (Max)	230 W
Rds On (Max)	13 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	4 V

IRF2807 Series

Part	Vgs(th) (Max)	Technology	Operating Temperature (Min)	Operating Temperature (Max)	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Package Name	Rds On (Max)	Power Dissipation (Max)	Mounting Type	Current - Continuous Drain (Id) (Tc)	Package / Case	FET Type	Input Capacitance (Ciss) (Max)	Vgs (Max)	Gate Charge (Max)
INFINEON IRF2807STRLPBF	4 V	MOSFET (Metal Oxide)	-55 °C	175 °C	75 V	10 V	D2PAK	13 mOhm	230 W	Surface Mount	82 A	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	N-Channel	3820 pF	20 V	160 nC
INFINEON IRF2807ZSTRLPBF	4 V	MOSFET (Metal Oxide)	-55 °C	175 °C	75 V	10 V	D2PAK	9.4 mOhm	170 W	Surface Mount	75 A	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	N-Channel		20 V	110 nC
INFINEON IRF2807STRRPBF	4 V	MOSFET (Metal Oxide)	-55 °C	175 °C	75 V	10 V	D2PAK	13 mOhm	230 W	Surface Mount	82 A	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	N-Channel	3820 pF	20 V	160 nC
INFINEON IRF2807PBF	4 V	MOSFET (Metal Oxide)	-55 °C	175 °C	75 V	10 V	TO-220AB	13 mOhm	230 W	Through Hole	82 A	TO-220-3	N-Channel	3820 pF	20 V	160 nC

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