Specification	SI7601DN-T1-GE3

Current - Continuous Drain (Id) (Tc)	16 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On)	2.5 V
Drive Voltage (Min Rds On)	4.5 V
FET Type	P-Channel
Gate Charge (Max)	27 nC
Input Capacitance (Ciss) (Max)	1870 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-50 °C
Package / Case	PowerPAK® 1212-8
Package Name	PowerPAK® 1212-8
Power Dissipation (Max)	52 W, 3.8 W
Rds On (Max)	19.2 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max)	1.6 V

SI7601 Series

Part	Operating Temperature (Min)	Operating Temperature (Max)	Drive Voltage (Max Rds On)	Drive Voltage (Min Rds On)	Gate Charge (Max)	Drain to Source Voltage (Vdss)	Rds On (Max)	Current - Continuous Drain (Id) (Tc)	Technology	FET Type	Mounting Type	Package / Case	Vgs (Max)	Vgs(th) (Max)	Package Name	Input Capacitance (Ciss) (Max)	Power Dissipation (Max)
Vishay Dale SI7601DN-T1-GE3	-50 °C	150 °C	2.5 V	4.5 V	27 nC	20 V	19.2 mOhm	16 A	MOSFET (Metal Oxide)	P-Channel	Surface Mount	PowerPAK® 1212-8	12 V	1.6 V	PowerPAK® 1212-8	1870 pF	3.8 W 52 W

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Create a free account to access distributor pricing data.

3D models and CAD resources for this part

Technical documentation and resources

No documents available