TMBT3906,LM
ActiveToshiba Semiconductor and Storage
BIPOLAR TRANSISTORS, PNP BIPOLAR TRANSISTOR, -50 V, -0.2 A, SOT-23(SOT23)
TMBT3906,LM
ActiveToshiba Semiconductor and Storage
BIPOLAR TRANSISTORS, PNP BIPOLAR TRANSISTOR, -50 V, -0.2 A, SOT-23(SOT23)
Description
General part information
TMBT3906 Series
Bipolar Transistors, PNP Bipolar Transistor, -50 V, -0.2 A, SOT-23(SOT23)
Technical Specifications
Parameters and characteristics for this part
| Specification | TMBT3906,LM |
|---|---|
| Current - Collector (Ic) (Max) | 150 mA, 0.15 mA |
| Current - Collector Cutoff (Max) | 100 nA |
| DC Current Gain (hFE) (Min) | 100 |
| Frequency - Transition | 250 MHz |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | TO-236-3, SOT-23-3, SC-59 |
| Package Name | SOT-23-3 |
| Power - Max | 320 mW |
| Transistor Type | PNP |
| Vce Saturation (Max) | 400 mV |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
Pricing
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CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources
TMBT3906,LM | Datasheet
The maximum ratings:Bipolar Transistor Application Notes
TMBT3906 Data sheet/Japanese
The thermal stability and thermal design:Bipolar Transistor Application Notes
Selection Guide Small Signal 2025 Rev1.0
Surface Mount Small Signal Transistor (BJT) Precautions for use
The terms used in data sheets:Bipolar Transistor Application Notes
Mini catalog Introduction to Toshiba small package Bipolar Transistors
The electrical characteristics and equivalent circuit:Bipolar Transistor Application Notes