Specification	SI3460DV-T1-E3

Current - Continuous Drain (Id) (Ta)	5.1 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On)	1.8 V
Drive Voltage (Min Rds On)	4.5 V
FET Type	N-Channel
Gate Charge (Max)	20 nC
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	TSOT-23-6, SOT-23-6 Thin
Package Name	6-TSOP
Power Dissipation (Max)	1.1 W
Rds On (Max)	27 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max)	450 mV

SI3460 Series

Part	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Vgs (Max)	Technology	Operating Temperature (Min)	Operating Temperature (Max)	Drain to Source Voltage (Vdss)	Package Name	Mounting Type	Rds On (Max)	Package / Case	Vgs(th) (Max)	Input Capacitance (Ciss) (Max)	Current - Continuous Drain (Id) (Tc)	FET Type	Power Dissipation (Max)	Gate Charge (Max)	Current - Continuous Drain (Id) (Ta)
Vishay Dale SI3460DDV-T1-GE3	4.5 V	1.8 V	8 V	MOSFET (Metal Oxide)	-55 °C	150 °C	20 V	6-TSOP	Surface Mount	28 mOhm	SOT-23-6 Thin TSOT-23-6	1 V	666 pF	7.9 A	N-Channel	1.7 W 2.7 W	18 nC
Vishay Dale SI3460BDV-T1-GE3	4.5 V	1.8 V	8 V	MOSFET (Metal Oxide)	-55 °C	150 °C	20 V	6-TSOP	Surface Mount	27 mOhm	SOT-23-6 Thin TSOT-23-6	1 V	860 pF	8 A	N-Channel	2 W 3.5 W	24 nC
Vishay Dale SI3460DV-T1-E3	4.5 V	1.8 V	8 V	MOSFET (Metal Oxide)	-55 °C	150 °C	20 V	6-TSOP	Surface Mount	27 mOhm	SOT-23-6 Thin TSOT-23-6	450 mV			N-Channel	1.1 W	20 nC	5.1 A

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