
IXFN180N07
ObsoleteMOSFET MODULES 180 AMPS 70V 0.007 RDS

IXFN180N07
ObsoleteMOSFET MODULES 180 AMPS 70V 0.007 RDS
Description
General part information
IXFN180 Series
Trench Gate Power MOSFETs are ideally suited for low voltage/ high current applications, requiring an exceedingly low RDS(on), thus guaranteeing very low power Dissipation. This, combined with wide ranging operating junction temperature from -40 °C to 175 °C make them suitable candidates for automobile applications and other similar demanding applications in harsh environments. Advantages: Easy to Mount Space Savings High power density
Technical Specifications
Parameters and characteristics for this part
| Specification | IXFN180N07 |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 180 A |
| Drain to Source Voltage (Vdss) | 70 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 480 nC |
| Input Capacitance (Ciss) (Max) | 9000 pF |
| Mounting Type | Chassis Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | SOT-227-4, miniBLOC |
| Package Name | SOT-227B |
| Power Dissipation (Max) | 520 W |
| Rds On (Max) | 7 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 4 V |
Pricing
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