BUK7Y2R5-40HX

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Nexperia USA Inc.

N-CHANNEL 40 V, 2.5 MΩ STANDARD LEVEL MOSFET IN LFPAK56

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BUK7Y2R5-40HX

Active

Nexperia USA Inc.

N-CHANNEL 40 V, 2.5 MΩ STANDARD LEVEL MOSFET IN LFPAK56

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Description Specifications Series Pricing CAD Documents

Description

General part information

BUK7Y2R5-40H Series

Automotive qualified N-channel MOSFET using the latest Trench 9 low ohmic superjunction technology, housed in a robust LFPAK56 package. This product has been fully designed and qualified to meet AEC-Q101 requirements delivering high performance and endurance.

Technical Specifications

Parameters and characteristics for this part

Specification	BUK7Y2R5-40HX

Current - Continuous Drain (Id) (Tc)	120 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	79 nC
Grade	Automotive
Input Capacitance (Ciss) (Max)	4790 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	SOT-669, SC-100
Package Name	LFPAK56, Power-SO8
Power Dissipation (Max)	190 W
Qualification	AEC-Q101
Rds On (Max)	2.5 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max) Negative	-10 V
Vgs (Max) Positive	20 V
Vgs(th) (Max)	3.6 V

BUK7Y2R5-40H Series

N-channel 40 V, 2.5 mΩ standard level MOSFET in LFPAK56

Part	Package Name	FET Type	Technology	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Package / Case	Input Capacitance (Ciss) (Max)	Vgs(th) (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) (Tc)	Qualification	Gate Charge (Max)	Grade	Vgs (Max) Negative	Vgs (Max) Positive	Rds On (Max)	Power Dissipation (Max)
Nexperia USA Inc. BUK7Y2R5-40HX	LFPAK56 Power-SO8	N-Channel	MOSFET (Metal Oxide)	10 V	Surface Mount	SC-100 SOT-669	4790 pF	3.6 V	-55 °C	175 °C	40 V	120 A	AEC-Q101	79 nC	Automotive	-10 V	20 V	2.5 mOhm	190 W