VP0808L-G

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Microchip Technology

TRANS MOSFET P-CH SI 80V 0.28A 3-PIN TO-92 BAG

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Microchip Technology

TRANS MOSFET P-CH SI 80V 0.28A 3-PIN TO-92 BAG

Technical Specifications

Parameters and characteristics commom to parts in this series

Specification	VP0808L-G	VP0808 Series

	-	-
Current - Continuous Drain (Id) @ 25°C	280 mA	280 mA
Drain to Source Voltage (Vdss)	80 V	80 V
Drive Voltage (Max Rds On, Min Rds On)	10 V	10 V
FET Type	P-Channel	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	150 pF	150 pF
Mounting Type	Through Hole	Through Hole
Operating Temperature [Max]	150 °C	150 °C
Operating Temperature [Min]	-55 °C	-55 °C
Package / Case	TO-226-3, TO-92-3	TO-226-3, TO-92-3
Power Dissipation (Max)	1 W	1 W
Rds On (Max) @ Id, Vgs	5 Ohm	5 Ohm
Supplier Device Package	TO-92-3	TO-92-3
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Vgs (Max)	30 V	30 V
Vgs(th) (Max) @ Id	4.5 V	4.5 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

TRANS MOSFET P-CH SI 80V 0.28A 3-PIN TO-92 BAG

Part	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Technology	Power Dissipation (Max)	FET Type	Input Capacitance (Ciss) (Max) @ Vds
Microchip Technology VP0808L-G
Microchip Technology VP0808L-G	TO-226-3, TO-92-3	10 V	5 Ohm	4.5 V	30 V	-55 °C	150 °C	TO-92-3	80 V	280 mA	Through Hole	MOSFET (Metal Oxide)	1 W	P-Channel	150 pF

General part information

P-Channel 80 V 280mA (Tj) 1W (Tc) Through Hole TO-92-3

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