Specification	IPD33CN10NGBUMA1

Current - Continuous Drain (Id) (Tc)	27 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	24 nC, 24 nC
Input Capacitance (Ciss) (Max)	1570 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Package Name	PG-TO252-3
Power Dissipation (Max)	58 W
Rds On (Max)	33 mOhm, 33 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	4 V

IPD33C Series

Part	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Technology	FET Type	Current - Continuous Drain (Id) (Tc)	Vgs (Max)	Package Name	Vgs(th) (Max)	Rds On (Max)	Package / Case	Operating Temperature (Min)	Operating Temperature (Max)	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Gate Charge (Max)	Input Capacitance (Ciss) (Max)
INFINEON IPD33CN10NGBUMA1	58 W	100 V	MOSFET (Metal Oxide)	N-Channel	27 A	20 V	PG-TO252-3	4 V	33 mOhm 33 mOhm	DPAK (2 Leads + Tab) SC-63 TO-252-3	-55 °C	175 °C	10 V	Surface Mount	24 nC 24 nC	1570 pF

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