SRT13 A1G

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Taiwan Semiconductor Corporation

DIODE SCHOTTKY 30V 1A TS-1

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Unknown

Taiwan Semiconductor Corporation

DIODE SCHOTTKY 30V 1A TS-1

Technical Specifications

Parameters and characteristics for this part

Specification	SRT13 A1G

Current - Average Rectified (Io)	1 A
Current - Reverse Leakage @ Vr	500 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	125 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	T-18, Axial
Speed	200 mA, 500 ns
Supplier Device Package	TS-1
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	30 V
Voltage - Forward (Vf) (Max) @ If	550 mV

Part	Mounting Type	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max) [Max]	Supplier Device Package	Package / Case	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Voltage - Forward (Vf) (Max) @ If	Technology	Speed	Current - Average Rectified (Io)
Taiwan Semiconductor Corporation SRT13 A1G	Through Hole	500 µA	30 V	TS-1	T-18 Axial	-55 °C	125 °C	550 mV	Schottky	200 mA 500 ns	1 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 30 V 1A Through Hole TS-1

Technical documentation and resources