Specification	SIHP12N60E-BE3

Current - Continuous Drain (Id) (Tc)	12 A
Drain to Source Voltage (Vdss)	600 V
FET Type	N-Channel
Gate Charge (Max)	58 nC, 58 nC
Input Capacitance (Ciss) (Max)	937 pF
Mounting Type	Through Hole
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-220-3
Package Name	TO-220AB
Power Dissipation (Max)	147 W
Rds On (Max)	380 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max)	4 V

SIHP12 Series

Part	Rds On (Max)	Input Capacitance (Ciss) (Max)	Gate Charge (Max)	Power Dissipation (Max)	Package Name	Drain to Source Voltage (Vdss)	Vgs(th) (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Mounting Type	Package / Case	Technology	Current - Continuous Drain (Id) (Tc)	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Vgs (Max)
Vishay Dale SIHP12N60E-E3	380 mOhm	937 pF	58 nC 58 nC	147 W	TO-220AB	600 V	4 V	-55 °C	150 °C	Through Hole	TO-220-3	MOSFET (Metal Oxide)	12 A	10 V	N-Channel	30 V
Vishay Dale SIHP12N60E-BE3	380 mOhm	937 pF	58 nC 58 nC	147 W	TO-220AB	600 V	4 V	-55 °C	150 °C	Through Hole	TO-220-3	MOSFET (Metal Oxide)	12 A		N-Channel	30 V

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