CY62157ESL-45ZSXI

NRND

INFINEON

SRAM CHIP ASYNC SINGLE 2.5V/3.3V/5V 8M-BIT 512K X 16 45NS 44-PIN TSOP-II TRAY

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CY62157ESL-45ZSXI

NRND

INFINEON

SRAM CHIP ASYNC SINGLE 2.5V/3.3V/5V 8M-BIT 512K X 16 45NS 44-PIN TSOP-II TRAY

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Description Specifications Series Pricing CAD Documents

Description

General part information

CY62157 Series

CY62157ESL-45ZSXI is a high performance CMOS static RAM organized as 512K words by 16 bits. This device features advanced circuit design to provide ultra low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications. The device also has an automatic power down feature that significantly reduces power consumption when addresses are not toggling. Place the device into standby mode when deselected (active-low CE HIGH or both active-low BHE and active-low BLE are HIGH). The input or output pins (I/O0 through I/O15) are placed in a high impedance state when the device is deselected (active-low CE HIGH), the outputs are disabled (active-low OE HIGH), both the byte high enable and the byte low enable are disabled (active-low BHE, active-low BLE HIGH), or during an active write operation (active-low CE LOW and active-low WE LOW). This device is suitable for interfacing with processors that have TTL I/P levels.

Technical Specifications

Parameters and characteristics for this part

Specification	CY62157ESL-45ZSXI

Access Time	45 ns
Memory Depth	512 K
Memory Format	SRAM
Memory Interface (Type)	Parallel
Memory Size	1 MB
Memory Type	Volatile
Memory Width	16 bit
Mounting Type	Surface Mount
Operating Temperature (Max)	85 °C
Operating Temperature (Min)	-40 °C
Package Length	10.16 mm
Package Name	44-TSOP II, 44-TSOP
Package Width	10.16 mm
Technology	SRAM - Asynchronous
Voltage - Supply (Maximum)	5.5 V
Voltage - Supply (Minimum)	2.2 V
Write Cycle Time - Page	45 ns
Write Cycle Time - Word	45 ns

CY62157 Series

Part	Operating Temperature (Max)	Operating Temperature (Min)	Voltage - Supply (Maximum)	Voltage - Supply (Minimum)	Write Cycle Time - Word	Write Cycle Time - Page	Package Length	Package Name	Package Width	Memory Interface (Type)	Memory Type	Technology	Memory Format	Memory Depth	Memory Width	Access Time	Memory Size	Mounting Type	Package / Case
INFINEON CY62157DV30LL-55ZSXI	85 °C	-40 °C	3.6 V	2.2 V	55 ns	55 ns	10.16 mm	44-TSOP 44-TSOP II	10.16 mm	Parallel	Volatile	SRAM - Asynchronous	SRAM	512 K	16 bit	55 ns	1 MB	Surface Mount
INFINEON CY62157G18-55BVXIT	85 °C	-40 °C	2.2 V	1.65 V	55 ns	55 ns	6 mm	48-VFBGA	8 mm	Parallel	Volatile	SRAM - Asynchronous	SRAM	512 K	16 bit	55 ns	1 MB	Surface Mount	48-VFBGA
INFINEON CY62157G30-45BVXIT	85 °C	-40 °C	3.6 V	2.2 V	45 ns	45 ns	6 mm	48-VFBGA	8 mm	Parallel	Volatile	SRAM - Asynchronous	SRAM	512 K	16 bit	45 ns	1 MB	Surface Mount	48-VFBGA
INFINEON CY62157G30-45BVXAT	85 °C	-40 °C	3.6 V	2.2 V	45 ns	45 ns	6 mm	48-VFBGA	8 mm	Parallel	Volatile	SRAM - Asynchronous	SRAM	512 K	16 bit	45 ns	1 MB	Surface Mount	48-VFBGA
INFINEON CY62157ELL-55ZSXET	125 °C	-40 °C	5.5 V	4.5 V	55 ns	55 ns	10.16 mm	44-TSOP 44-TSOP II	10.16 mm	Parallel	Volatile	SRAM - Asynchronous	SRAM	512 K	16 bit	55 ns	1 MB	Surface Mount
INFINEON CY62157DV30L-55BVXET	125 °C	-40 °C	3.6 V	2.2 V	55 ns	55 ns	6 mm	48-VFBGA	8 mm	Parallel	Volatile	SRAM - Asynchronous	SRAM	512 K	16 bit	55 ns	1 MB	Surface Mount	48-VFBGA
INFINEON CY62157CV33LL-70BAI	85 °C	-40 °C	3.6 V	3 V	70 ns	70 ns	6 mm	48-FBGA	10 mm	Parallel	Volatile	SRAM - Asynchronous	SRAM	512 K	16 bit	70 ns	1 MB	Surface Mount	48-TFBGA
INFINEON CY62157ESL-45ZSXI	85 °C	-40 °C	5.5 V	2.2 V	45 ns	45 ns	10.16 mm	44-TSOP 44-TSOP II	10.16 mm	Parallel	Volatile	SRAM - Asynchronous	SRAM	512 K	16 bit	45 ns	1 MB	Surface Mount
INFINEON CY62157EV30LL-45ZSXAT	85 °C	-40 °C	3.6 V	2.2 V	45 ns	45 ns	10.16 mm	44-TSOP 44-TSOP II	10.16 mm	Parallel	Volatile	SRAM - Asynchronous	SRAM	512 K	16 bit	45 ns	1 MB	Surface Mount
INFINEON CY62157G18-55BVXAT	85 °C	-40 °C	2.2 V	1.65 V	55 ns	55 ns	6 mm	48-VFBGA	8 mm	Parallel	Volatile	SRAM - Asynchronous	SRAM	512 K	16 bit	55 ns	1 MB	Surface Mount	48-VFBGA

Pricing

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CAD

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Documents

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Datasheet

CY62157ESL-45ZSXI | Datasheet