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BSC030P03NS3GAUMA1

BSC030P03NS3GAUMA1

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INFINEON

OPTIMOS™ P-CHANNEL POWER MOSFET -30 V ; SUPERSO8 5X6 PACKAGE; 3 MOHM;

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BSC030P03NS3GAUMA1

BSC030P03NS3GAUMA1

Active
INFINEON

OPTIMOS™ P-CHANNEL POWER MOSFET -30 V ; SUPERSO8 5X6 PACKAGE; 3 MOHM;

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Description

General part information

BSC030 Series

These products consistently meet the highest quality and performance demands in key specifications for power system design such as on-state resistance and figure of merit characteristics.

Technical Specifications

Parameters and characteristics for this part

SpecificationBSC030P03NS3GAUMA1
Current - Continuous Drain (Id) (Ta)25.4 A
Current - Continuous Drain (Id) (Tc)100 A
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On)6 V
Drive Voltage (Min Rds On)10 V
FET TypeP-Channel
Gate Charge (Max)186 nC
Input Capacitance (Ciss) (Max)14000 pF
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / Case8-PowerTDFN
Package NamePG-TDSON-8-1
Power Dissipation (Max)125 W, 2.5 W
Rds On (Max)3 mOhm, 3 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)25 V
Vgs(th) (Max)3.1 V

Pricing

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CAD

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Documents

Technical documentation and resources