STT2PF60L

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STMicroelectronics

MOSFET P-CH 60V 2A SOT23-6

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STMicroelectronics

MOSFET P-CH 60V 2A SOT23-6

Technical Specifications

Parameters and characteristics for this part

Specification	STT2PF60L

Current - Continuous Drain (Id) @ 25°C	2 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	7 nC
Input Capacitance (Ciss) (Max) @ Vds	313 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-23-6
Power Dissipation (Max)	1.6 W
Rds On (Max) @ Id, Vgs	250 mOhm
Supplier Device Package	SOT-23-6
Technology	MOSFET (Metal Oxide)
Vgs (Max)	15 V
Vgs(th) (Max) @ Id	1 V

MOSFET P-CH 60V 2A SOT23-6

Part	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Package / Case	FET Type	Supplier Device Package	Operating Temperature	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Technology	Mounting Type	Vgs (Max)	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)
STMicroelectronics STT2PF60L	2 A	250 mOhm	7 nC	SOT-23-6	P-Channel	SOT-23-6	150 °C	1.6 W	60 V	313 pF	MOSFET (Metal Oxide)	Surface Mount	15 V	1 V	4.5 V, 10 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

P-Channel 60 V 2A (Tc) 1.6W (Tc) Surface Mount SOT-23-6

Technical documentation and resources