IRS21851SPBF

Obsolete

Infineon Technologies

IC GATE DRVR HIGH-SIDE 8SOIC

Search across all available documentation for this part.

Obsolete

Infineon Technologies

IC GATE DRVR HIGH-SIDE 8SOIC

Technical Specifications

Parameters and characteristics for this part

Specification	IRS21851SPBF

Channel Type	Single
Current - Peak Output (Source, Sink) [custom]	4 A
Current - Peak Output (Source, Sink) [custom]	4 A
Driven Configuration	High-Side
Gate Type	N-Channel MOSFET, IGBT
High Side Voltage - Max (Bootstrap) [Max]	600 V
Input Type	Non-Inverting
Logic Voltage - VIL, VIH	2.5 V, 0.8 V
Mounting Type	Surface Mount
Number of Drivers	1
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Rise / Fall Time (Typ) [custom]	15 ns
Rise / Fall Time (Typ) [custom]	15 ns
Supplier Device Package	8-SOIC
Voltage - Supply [Max]	20 V
Voltage - Supply [Min]	10 VDC

Part	Mounting Type	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Channel Type	Current - Peak Output (Source, Sink) [custom]	Current - Peak Output (Source, Sink) [custom]	Operating Temperature [Min]	Operating Temperature [Max]	Voltage - Supply [Max]	Voltage - Supply [Min]	Logic Voltage - VIL, VIH	High Side Voltage - Max (Bootstrap) [Max]	Driven Configuration	Supplier Device Package	Gate Type	Input Type	Package / Case	Package / Case [y]	Package / Case [x]	Number of Drivers
Infineon Technologies IRS21851SPBF	Surface Mount	15 ns	15 ns	Single	4 A	4 A	-55 °C	150 °C	20 V	10 VDC	0.8 V 2.5 V	600 V	High-Side	8-SOIC	IGBT N-Channel MOSFET	Non-Inverting	8-SOIC	3.9 mm	0.154 in	1

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

High-Side Gate Driver IC Non-Inverting 8-SOIC

Technical documentation and resources

No documents available