IR2130SPBF

LTB

INFINEON

THE IR2130S IS A 600 V THREE-PHASE GATE DRIVER IC WITH OVER CURRENT PROTECTION, OPAMP AND FAULT REPORTING

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IR2130SPBF

LTB

INFINEON

THE IR2130S IS A 600 V THREE-PHASE GATE DRIVER IC WITH OVER CURRENT PROTECTION, OPAMP AND FAULT REPORTING

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Description Specifications Series Pricing CAD Documents

Description

General part information

IR2130 Series

EiceDRIVER™ 600 V three phasegate driver ICwith typical 0.25 A source and 0.5 A sink currents in 28 Lead SOICWB package forIGBTsandMOSFETs. Also available in 28 Lead PDIP and 44 Lead PLCC.

Technical Specifications

Parameters and characteristics for this part

Specification	IR2130SPBF

Channel Type	3-Phase
Current - Peak Output (Sink)	500 mA
Current - Peak Output (Source)	250 mA
Driven Configuration	Half-Bridge
Fall Time (Typ)	35 ns
Gate Channel	N-Channel
Gate Type	IGBT, MOSFET, N-Channel MOSFET
High Side Voltage - Max (Bootstrap)	600 V
Input Type	Inverting
Logic Voltage - VIH	2.2 V
Logic Voltage - VIL	0.8 V
Mounting Type	Surface Mount
Number of Drivers	6
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-40 °C
Package Length	0.295 in
Package Name	28-SOIC
Package Width	7.5 mm
Rise Time (Typ)	80 ns
Voltage - Supply (Maximum)	20 V
Voltage - Supply (Minimum)	10 VDC

IR2130 Series

Part	Gate Type	Voltage - Supply (Minimum)	Voltage - Supply (Maximum)	Mounting Type	Logic Voltage - VIL	Logic Voltage - VIH	Input Type	Driven Configuration	Channel Type	Package Width	Package Name	Package Length	Operating Temperature (Min)	Operating Temperature (Max)	Rise Time (Typ)	Fall Time (Typ)	Number of Drivers	Current - Peak Output (Sink)	Current - Peak Output (Source)	Gate Channel	High Side Voltage - Max (Bootstrap)	Package Leads
INFINEON IR2130S	IGBT MOSFET N-Channel MOSFET	10 VDC	20 V	Surface Mount	0.8 V	2.2 V	Inverting	Half-Bridge	3-Phase	7.5 mm	28-SOIC	0.295 in	-40 °C	150 °C	80 ns	35 ns	6	500 mA	250 mA	N-Channel	600 V
INFINEON IR2130JPBF	IGBT MOSFET N-Channel MOSFET	10 VDC	20 V	Surface Mount	0.8 V	2.2 V	Inverting	Half-Bridge	3-Phase	16.58 mm	32 Leads 44-LCC (J-Lead)	16.58 mm	-40 °C	150 °C	80 ns	35 ns	6	500 mA	250 mA	N-Channel	600 V	32 Leads
INFINEON IR2130STR	IGBT MOSFET N-Channel MOSFET	10 VDC	20 V	Surface Mount	0.8 V	2.2 V	Inverting	Half-Bridge	3-Phase	7.5 mm	28-SOIC	0.295 in	-40 °C	150 °C	80 ns	35 ns	6	500 mA	250 mA	N-Channel	600 V
INFINEON IR2130	IGBT MOSFET N-Channel MOSFET	10 VDC	20 V	Through Hole	0.8 V	2.2 V	Inverting	Half-Bridge	3-Phase	15.24 mm	28-DIP 28-PDIP	0.6 in	-40 °C	150 °C	80 ns	35 ns	6	500 mA	250 mA	N-Channel	600 V
INFINEON IR2130J	IGBT MOSFET N-Channel MOSFET	10 VDC	20 V	Surface Mount	0.8 V	2.2 V	Inverting	Half-Bridge	3-Phase	16.58 mm	32 Leads 44-LCC (J-Lead)	16.58 mm	-40 °C	150 °C	80 ns	35 ns	6	500 mA	250 mA	N-Channel	600 V	32 Leads
INFINEON IR2130SPBF	IGBT MOSFET N-Channel MOSFET	10 VDC	20 V	Surface Mount	0.8 V	2.2 V	Inverting	Half-Bridge	3-Phase	7.5 mm	28-SOIC	0.295 in	-40 °C	150 °C	80 ns	35 ns	6	500 mA	250 mA	N-Channel	600 V
INFINEON IR2130JPBF
INFINEON IR2130STRPBF	IGBT MOSFET N-Channel MOSFET	10 VDC	20 V	Surface Mount	0.8 V	2.2 V	Inverting	Half-Bridge	3-Phase	7.5 mm	28-SOIC	0.295 in	-40 °C	150 °C	80 ns	35 ns	6	500 mA	250 mA	N-Channel	600 V
INFINEON IR2130JTR	IGBT MOSFET N-Channel MOSFET	10 VDC	20 V	Surface Mount	0.8 V	2.2 V	Inverting	Half-Bridge	3-Phase	16.58 mm	32 Leads 44-LCC (J-Lead)	16.58 mm	-40 °C	150 °C	80 ns	35 ns	6	500 mA	250 mA	N-Channel	600 V	32 Leads
INFINEON IR2130PBF	IGBT MOSFET N-Channel MOSFET	10 VDC	20 V	Through Hole	0.8 V	2.2 V	Inverting	Half-Bridge	3-Phase	15.24 mm	28-DIP 28-PDIP	0.6 in	-40 °C	150 °C	80 ns	35 ns	6	500 mA	250 mA	N-Channel	600 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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CAD

3D models and CAD resources for this part

Documents

Technical documentation and resources

IR2130SPBF | Datasheet