Description
General part information
1ED44176 Series
EiceDRIVERTM25 V single-channel low-side non-invertinggate driverforMOSFETandIGBTwith typical 0.8 A source and 1.75 A sink currents in a small 8-lead PG-DSO8 package. Over-current protection is typically implemented by a current measurement with a comparator and multiple resistors and capacitors. 1ED44176N01F provides cost and space savings by integrating the comparator. The new low-side gate driver utilizes Infineon’s proprietary latch immune CMOS technologies to enable a rugged monolithic construction while realizing best-in-class fault reporting accuracy with OCP threshold tolerance of +/-5%. In addition, Infineon’s IC technology enables a small PG-DSO8 package by combining the fault output and enable functions into a single pin. Evaluation board also available:EVAL-1ED44176N01F
Technical Specifications
Parameters and characteristics for this part
| Specification | 1ED44176N01FXUMA1 |
|---|---|
| Channel Type | Single |
| Current - Peak Output (Sink) | 1.75 A |
| Current - Peak Output (Source) | 800 mA |
| Driven Configuration | Low-Side |
| Fall Time (Typ) | 25 ns |
| Gate Type | IGBT |
| Input Type | CMOS, TTL |
| Logic Voltage - VIH | 1.7 V |
| Logic Voltage - VIL | 1.2 V |
| Mounting Type | Surface Mount |
| Number of Drivers | 1 |
| Operating Temperature (Max) | 125 °C |
| Operating Temperature (Min) | -40 °C |
| Package Length | 0.154 in |
| Package Name | 8-SOIC |
| Package Width | 3.9 mm |
| Rise Time (Typ) | 50 ns |
| Voltage - Supply (Maximum) | 20 V |
| Voltage - Supply (Minimum) | 12.7 V |
Pricing
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