Specification	IRF9530S

Current - Continuous Drain (Id) (Tc)	12 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	P-Channel
Gate Charge (Max)	38 nC
Input Capacitance (Ciss) (Max)	860 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Package Name	TO-263 (D2PAK)
Power Dissipation (Max)	3.7 W, 88 W
Rds On (Max)	300 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	4 V

IRF9530 Series

Part	Rds On (Max)	Mounting Type	FET Type	Package / Case	Power Dissipation (Max)	Gate Charge (Max)	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Operating Temperature (Min)	Operating Temperature (Max)	Vgs(th) (Max)	Current - Continuous Drain (Id) (Tc)	Technology	Package Name	Vgs (Max)	Input Capacitance (Ciss) (Max)
Vishay Dale IRF9530STRRPBF	300 mOhm	Surface Mount	P-Channel	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	3.7 W 88 W	38 nC	10 V	100 V	-55 °C	175 °C	4 V	12 A	MOSFET (Metal Oxide)	TO-263 (D2PAK)	20 V	860 pF
Vishay Dale IRF9530S	300 mOhm	Surface Mount	P-Channel	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	3.7 W 88 W	38 nC	10 V	100 V	-55 °C	175 °C	4 V	12 A	MOSFET (Metal Oxide)	TO-263 (D2PAK)	20 V	860 pF
Vishay Dale IRF9530L	300 mOhm	Through Hole	P-Channel	I2PAK TO-262-3 Long Leads TO-262AA		38 nC	10 V	100 V	-55 °C	175 °C	4 V	12 A	MOSFET (Metal Oxide)	I2PAK	20 V	860 pF
Vishay Dale IRF9530STRL	300 mOhm	Surface Mount	P-Channel	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	3.7 W 88 W	38 nC	10 V	100 V	-55 °C	175 °C	4 V	12 A	MOSFET (Metal Oxide)	TO-263 (D2PAK)	20 V	860 pF

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Create a free account to access distributor pricing data.

3D models and CAD resources for this part

Technical documentation and resources