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BC337-16 TIN/LEAD

BC337-16 TIN/LEAD

Active
Central Semiconductor Corp

BIPOLAR TRANSISTORS - BJT NPN 50VCBO 45VCEO 5.0VEBO 800MA 625MW

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BC337-16 TIN/LEAD

BC337-16 TIN/LEAD

Active
Central Semiconductor Corp

BIPOLAR TRANSISTORS - BJT NPN 50VCBO 45VCEO 5.0VEBO 800MA 625MW

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Description

General part information

BC337 Series

BIPOLAR TRANSISTORS - BJT NPN 50VCBO 45VCEO 5.0VEBO 800MA 625MW

Technical Specifications

Parameters and characteristics for this part

SpecificationBC337-16 TIN/LEAD
Current - Collector (Ic) (Max)500 mA
Current - Collector Cutoff (Max)100 nA
DC Current Gain (hFE) (Min)100
Frequency - Transition80 MHz
Mounting TypeThrough Hole
Operating Temperature (Max)150 °C
Operating Temperature (Min)-65 °C
Package / CaseTO-226-3, TO-92-3 (TO-226AA)
Package NameTO-92-3
Power - Max625 mW
Transistor TypePNP
Vce Saturation (Max)700 mV
Voltage - Collector Emitter Breakdown (Max)45 V

Pricing

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CAD

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Documents

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