
BC337-16 TIN/LEAD
ActiveCentral Semiconductor Corp
BIPOLAR TRANSISTORS - BJT NPN 50VCBO 45VCEO 5.0VEBO 800MA 625MW

BC337-16 TIN/LEAD
ActiveCentral Semiconductor Corp
BIPOLAR TRANSISTORS - BJT NPN 50VCBO 45VCEO 5.0VEBO 800MA 625MW
Description
General part information
BC337 Series
BIPOLAR TRANSISTORS - BJT NPN 50VCBO 45VCEO 5.0VEBO 800MA 625MW
Technical Specifications
Parameters and characteristics for this part
| Specification | BC337-16 TIN/LEAD |
|---|---|
| Current - Collector (Ic) (Max) | 500 mA |
| Current - Collector Cutoff (Max) | 100 nA |
| DC Current Gain (hFE) (Min) | 100 |
| Frequency - Transition | 80 MHz |
| Mounting Type | Through Hole |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -65 °C |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Package Name | TO-92-3 |
| Power - Max | 625 mW |
| Transistor Type | PNP |
| Vce Saturation (Max) | 700 mV |
| Voltage - Collector Emitter Breakdown (Max) | 45 V |
Pricing
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CAD
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Documents
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