Specification	BSO615CGHUMA1

Configuration	N, P-Channel
Current - Continuous Drain (Id) (Maximum)	2 A
Current - Continuous Drain (Id) (Typical)	3.1 A
Drain to Source Voltage (Vdss)	60 V
FET Feature	Logic Level Gate
Gate Charge (Max)	22.5 nC
Input Capacitance (Ciss) (Max)	380 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package Length	0.154 in
Package Name	8-SOIC, PG-DSO-8
Package Width	3.9 mm
Power - Max	2 VA
Rds On (Max)	110 mOhm
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max)	2 V

BSO615 Series

Part	Configuration	Mounting Type	Operating Temperature (Min)	Operating Temperature (Max)	Current - Continuous Drain (Id) (Maximum)	Current - Continuous Drain (Id) (Typical)	Power - Max	Package Length	Package Name	Package Width	Rds On (Max)	Technology	FET Feature	Vgs(th) (Max)	Gate Charge (Max)	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max)	Current - Continuous Drain (Id)	Grade	Qualification	Channel Count	Configuration - Features	Power - Max (Ta)
INFINEON BSO615CGHUMA1	N P-Channel	Surface Mount	-55 °C	150 °C	2 A	3.1 A	2 VA	0.154 in	8-SOIC PG-DSO-8	3.9 mm	110 mOhm	MOSFET (Metal Oxide)	Logic Level Gate	2 V	22.5 nC	60 V	380 pF
INFINEON BSO615NGXUMA1	N-Channel	Surface Mount	-55 °C	150 °C				0.154 in	8-SOIC PG-DSO-8	3.9 mm	150 mOhm	MOSFET (Metal Oxide)	Logic Level Gate	2 V	20 nC	60 V	380 pF	2.6 A	Automotive	AEC-Q101	2	Dual	2 W
INFINEON BSO615N	N-Channel	Surface Mount	-55 °C	150 °C			2 VA	0.154 in	8-SOIC PG-DSO-8	3.9 mm	150 mOhm	MOSFET (Metal Oxide)	Logic Level Gate	2 V	20 nC	60 V	380 pF	2.6 A			2	Dual

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