R6055VNZ4C13
ActiveRohm Semiconductor
600V 55A TO-247, PRESTOMOS™ WITH INTEGRATED HIGH-SPEED DIODE
R6055VNZ4C13
ActiveRohm Semiconductor
600V 55A TO-247, PRESTOMOS™ WITH INTEGRATED HIGH-SPEED DIODE
Description
General part information
R6055VNZ4 Series
R6055VNZ4 is Generation 4th PrestoMOS™ Fast Recovery Diode SJMOS, suitable for the switching applications.
Technical Specifications
Parameters and characteristics for this part
| Specification | R6055VNZ4C13 |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 55 A |
| Drain to Source Voltage (Vdss) | 600 V |
| Drive Voltage (Max Rds On) | 10 V |
| Drive Voltage (Min Rds On) | 15 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 80 nC, 80 nC |
| Input Capacitance (Ciss) (Max) | 3700 pF |
| Mounting Type | Through Hole |
| Operating Temperature | 150 °C |
| Package / Case | TO-247-3 |
| Package Name | TO-247 |
| Power Dissipation (Max) | 543 W |
| Rds On (Max) | 71 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
| Vgs(th) (Max) | 6.5 V |
Pricing
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CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources
Technical Data Sheet EN
PCB Layout Thermal Design Guide
Calculation of Power Dissipation in Switching Circuit
How to Use LTspice® Models
Package Dimensions
About Flammability of Materials
Method for Monitoring Switching Waveform
Benefits given by PrestoMOS™ series for the Phase-Shift Full-Bridge
Importance of Probe Calibration When Measuring Power: Deskew
What Is Thermal Design
MOSFET Gate Resistor Setting for Motor Driving
MOSFET Gate Drive Current Setting for Motor Driving
Explanation for Marking
Measurement Method and Usage of Thermal Resistance RthJC
Notes for Temperature Measurement Using Forward Voltage of PN Junction
Method for Calculating Junction Temperature from Transient Thermal Resistance Data
How to Use the Thermal Resistance and Thermal Characteristics Parameters
Temperature derating method for Safe Operating Area (SOA)
Types and Features of Transistors
Reduction in Switching Loss of Phase-Shift Full-Bridge Converter using PrestoMOS™ R60xxVNx series
Two-Resistor Model for Thermal Simulation
Compliance of the RoHS directive
θ<sub>JC</sub> and Ψ<sub>JT</sub>
Precautions When Measuring the Rear of the Package with a Thermocouple
How to Use LTspice® Models: Tips for Improving Convergence
θ<sub>JA</sub> and Ψ<sub>JT</sub>
Basics of Thermal Resistance and Heat Dissipation
Part Explanation
Judgment Criteria of Thermal Evaluation
R6055VNZ4 ESD Data
Overview of ROHM's Simulation Models(for ICs and Discrete Semiconductors)
What is a Thermal Model? (Transistor)
Moisture Sensitivity Level - Transistors
Anti-Whisker formation - Transistors
Report of SVHC under REACH Regulation
Example of Heat Dissipation Design for TO Packages: Effect of Heat Dissipation Materials
Notes for Temperature Measurement Using Thermocouples
Notes for Calculating Power Consumption:Static Operation
List of Transistor Package Thermal Resistance
Power Eco Family: Overview of ROHM's Power Semiconductor Lineup
About Export Regulations
Impedance Characteristics of Bypass Capacitor